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一、引言 在毛主席革命路线的指引下,我国的半导体材料和器件生产取得了飞速的发展,但是与国外水平还有很大差距,尤其表现在集成电路的成品率方面。成品率低的原因主要有材料质量和器件工艺两方面,而两者是互为影响的。大直径无位错硅单晶的问世,虽然对半导体材料和器件的发展起了推动作用,但伴随旧矛盾的解决又出现了新矛盾,即硅单晶中出现了一种线度在10~(-4)毫米左右的微缺陷,对器件性能的影响就变得突出了。
I. INTRODUCTION Under the guidance of Chairman Mao’s revolutionary line, the production of semiconductor materials and devices in China has witnessed rapid development. However, there is still a long way to go abroad, especially in terms of the yield of integrated circuits. The reasons for the low yield are mainly material quality and device technology, both of which influence each other. The advent of large-diameter dislocation-free silicon single crystals has played a catalytic role in the development of semiconductor materials and devices. However, with the contradiction between the old and the new contradictions, a new contradiction arises in that silicon single crystals appear in a linear range of 10 ~ (-4) mm microdefects, the impact on the performance of the device has become prominent.