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本文介绍一种新的采用载流子总量方法分析短沟道MOSFET直流稳态特性的数值模型。使用专用模拟程序 LADES1-A (Lisban Advance Device Simulation Version no.1-A)联解器件内部二维泊松方程、电子和空穴的连续性方程.LADES1-A可用于设计和预测不同工艺条件、几何结构对器件性能的影响.设计者通过分析器件内部二维电流密度、电场强度等分布,得到直观的短沟道效应的物理图象,以便采取适当措施减小短沟道效应.为了介绍本模拟软件的用途,本文给出部分模拟结果,并着重讨论了热载流子效应产生的衬底电流及非平衡载流子的产生-复合率的分布.
This paper presents a new numerical model for analyzing DC steady-state characteristics of short-channel MOSFETs using a carrier-based approach. Using the dedicated simulation program LADES1-A (Lisban Advance Device Simulation Version no.1-A), we solve the two-dimensional Poisson equation, continuity equation of electrons and holes inside the device.LADES1-A can be used to design and predict different process conditions, Geometric structure on the performance of the device.The designer through the analysis of two-dimensional device current density, electric field distribution, etc., to obtain a direct physical image of short-channel effect in order to take appropriate measures to reduce the short-channel effect.In order to introduce this Simulation software is used. Some simulation results are given in this paper, and the distribution of substrate current and non-equilibrium carrier generation - recombination rate generated by hot carrier effect is emphatically discussed.