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对电子束曝光时间和束流改变引起ＭＯＳ器件阈值电压有效迁移率的变化以及辐照损伤的消除作了研究，并对辐照损伤及退火的机理进行了探讨。
The change of effective mobility of threshold voltage of MOS device and the elimination of irradiation damage were studied on the exposure time and beam current of electron beam. The mechanism of irradiation damage and annealing was also discussed.