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采用一维近似模型对上扩散I~2L电路npn管基区工艺参数进行了理论分析,并且给出了实验结果。实验结果与理论分析较好地符合,显示出该近似分析是合理的和可用的。
One-dimensional approximation model is used to analyze the process parameters of npn base region of I ~ 2L circuit. The experimental results are also given. The experimental results agree well with the theoretical analysis, showing that the approximate analysis is reasonable and available.