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尽管过去几年对非晶半导体多层膜及其界面对多层膜传输性能影响的研究甚多,然而对于界面缺陷态的特性及其密度了解甚少。不同的测量方法得到的a-Si:H/a-SiNx:H界面缺陷态密度可从1010变到1012cm-2。这一实验结果反映了每一测试方法仅能探测某些能级的缺陷,在某些情况下可能是不同类的缺陷。非晶硅系材料都包含有氢。已发现,在多层膜的沉积过程中,由于组成多层膜的子层间应力释放的需要以及两子层材料的氢扩散系数不同而
Although there has been a great deal of research on the influence of the amorphous semiconductor multilayer film and its interface on the transmission performance of the multilayer film in the past few years, little is known about the characteristics of the interface defect state and its density. The densities of a-Si: H / a-SiNx: H interfacial defects obtained by different measurement methods vary from 1010 to 1012cm-2. This experimental result reflects that each test method can only detect some energy level defects, and in some cases may be different types of defects. Amorphous silicon materials contain hydrogen. It has been found that due to the need for stress release between the sublayers that make up the multilayer film and the hydrogen diffusion coefficients of the two sublayer materials during the deposition of the multilayer film