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我们对MBE高掺杂的n-GaAs∶Si和p-GaAs∶Be进行了光致发光研究,详细比较了高掺杂n-GaAs和p-GaAs在光谱线型,峰值半宽,峰值位置等方面的差异,以及两者的发光与温度的关系.由分析得出,对于高掺杂的n-GaAs,填充在导带内较高能态(K≠0)的电子与价带顶(K=0)空穴的非竖直跃迁是主要的发光过程.而对于高掺杂的p-GaAs,则是以导带底附近(K(?)0)的电子和价带顶附近(K(?)0)的空穴竖直跃迁为主要发光过程.
We studied the photoluminescence of MBE highly doped n-GaAs: Si and p-GaAs: Be, and compared in detail the spectral linearity, peak half width, peak position, etc. of highly doped n-GaAs and p- , And the relationship between the luminescence and the temperature.The results show that for the highly doped n-GaAs, electrons and valence bands filled in the higher conduction band (K ≠ 0) in the conduction band (K = 0) The non-vertical transition of holes is the main luminescence process, while for highly doped p-GaAs, the electron near the bottom of the conduction band (K (?) 0) ) 0) vertical hole jump as the main light-emitting process.