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提出了一种新型功率集成电路结构的设计方法。通过恰当的版图设计和利用垂直双扩散技术，可以在同一芯片上实现具有效强功率驱动能力的功能电路。这种结构的加工过程同ＶＤＭＯＳ完全兼容，关键技术是采用对接双重扩散形成ＮＭＯＳ结构，为实现芯片中ＮＭＯＳ结构与功率器件结构击穿性能的一致性，图形设计时，应将ＮＭＯＳ单元放置在ＶＤＭＯＳ器件的中心附近以取代部分ＶＤＭＯＳ元胞。通过电路与功率器件的内部连接而形成功率集成电路。
A new design method of power integrated circuit structure is proposed. With the proper layout design and the use of vertical double-diffused technology, it is possible to implement functional circuits with powerful power-driven capability on the same chip. The process of this structure is fully compatible with the VDMOS, the key technology is the use of docking double diffusion to form the NMOS structure, in order to achieve the chip NMOS structure and power device structure breakdown performance of the consistency of the graphics design, the NMOS cell should be placed in the VDMOS Near the center of the device to replace part of the VDMOS cells. The power integrated circuit is formed by the internal connection of the circuit with the power device.