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用热丝法在Si_3N_4,AlN,sialon陶瓷基材上沉积了金刚石薄膜。沉积参数与在单晶硅上沉积金刚石基本一致.沉积速率为1μm/h。用X射线衍射和Raman光谱检测了所形成的膜。用划痕实验估测膜基附着力。结果表明:在Si_3N_4和sialon陶瓷基材上附着力较好;随金刚石膜厚增长,膜基附着力下降。
Diamond films were deposited on Si_3N_4, AlN, sialon ceramic substrates by hot wire method. The deposition parameters are basically consistent with the deposition of diamond on monocrystalline silicon with a deposition rate of 1 μm / h. The formed film was examined by X-ray diffraction and Raman spectroscopy. Scratch test to evaluate film adhesion. The results show that the adhesion on Si_3N_4 and sialon ceramic substrates is better. The adhesion of film base decreases with the increase of diamond film thickness.