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利用溶胶–凝胶法在Si(100)衬底上制备了具有(110)取向的LaNiO3薄膜,然后在LaNiO3/Si(100)上制备了Ca0.4Sr0.6Bi4Ti4O15(Ca0.4Sr0.6BTi)薄膜。研究了LaNiO3缓冲层厚度对Ca0.4Sr0.6BTi薄膜结构和电性能的影响。结果表明,当引入LaNiO3厚度为250 nm时,Ca0.4Sr0.6BTi薄膜(200)面衍射峰择优取向最明显,即薄膜样品的(200)与(119)面衍射峰的相对强度I(200)/I(119)最大,为1.20;Ca0.4Sr0.6BTi薄膜的相对介电常数最大为230,介电损耗因子(tanδ)为0.068,剩余极化强度为17.5μC/cm2,矫顽电场为84.6 kV/cm。
A LaNiO3 thin film with (110) orientation was prepared on a Si (100) substrate by sol-gel method. Then a Ca0.4Sr0.6Bi4Ti4O15 (Ca0.4Sr0.6BTi) thin film was deposited on LaNiO3 / Si (100) The effect of LaNiO3 buffer layer thickness on the structure and electrical properties of Ca0.4Sr0.6BTi thin films was investigated. The results show that the preferred orientation of the diffraction peak of the (200) surface of Ca0.4Sr0.6BTi film is the most obvious when the thickness of LaNiO3 is 250 nm, that is, the relative intensity of the diffraction peaks of (200) and (119) / I (119) is 1.20. The Ca0.4Sr0.6BTi thin film has a maximum relative permittivity of 230, a dielectric loss tangent of 0.068, a remanent polarization of 17.5 μC / cm2 and a coercive field of 84.6 kV / cm.