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研究了在P型单晶硅上扩散的N区发射极上选择性化学镀镍工艺,获得了较为优化的化学镀工艺过程,得到了均匀致密的镀层。其中针对单晶硅表面的特点,采取了浓酸浸泡和HF处理以及氯化钯的活化方法,使得镀层质量得以提高。进行了合金化处理温度对合金层的电阻率影响的研究,结果发现在N_2气氛下330℃的热处理将会促进具有最低方块电阻的Ni-Si合金的形成。在方块电阻为45Ω/□的发射极上,化学镀后得到了方块电阻为2Ω/□的Ni-Si合金层。
The selective electroless nickel plating process on N-type emitter diffused on P-type single crystal silicon was studied. A more optimized electroless plating process was obtained and a uniform and dense coating was obtained. Which for the characteristics of single crystal silicon surface, take a concentrated acid soaking and HF treatment and activation of palladium chloride, making the coating quality can be improved. The effect of alloying temperature on the resistivity of the alloy layer was investigated. It was found that the 330 ℃ heat treatment in N 2 atmosphere would promote the formation of Ni-Si alloy with the lowest sheet resistance. On the emitter with a sheet resistance of 45Ω / □, a Ni-Si alloy layer with a sheet resistance of 2Ω / □ was obtained after electroless plating.