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1.引言分子束外延是基于一束或几束热能原子或分子束与结晶基底反应的超高真空薄膜技术。薄膜生长技术能够在尺寸控制非常精确的情况下制备出良好的晶体半导体层、金属层和绝缘层。利用这个技术有可能获得在天然晶体中所没有的一些电学和光学特性。这一技术在物理学和表面化学的研究及新型器件的研制中起着巨大的推动作用。
1. Introduction Molecular beam epitaxy is based on ultra-high vacuum thin film technology in which one or more thermal atoms or molecular beams react with a crystalline substrate. Thin film growth technology can produce good crystalline semiconductor layers, metal layers and insulating layers with very precise dimensional control. With this technique it is possible to obtain some of the electrical and optical properties that are not found in natural crystals. This technology plays a huge role in the research of physics and surface chemistry and the development of new devices.