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采用电容技术和传输测量对氧化物覆盖的硅衬底上的卤素灯退火再结晶硅膜的电特性进行了研究。经深能级瞬态谱分析表明,本体和界面的缺陷密度分别低于5×10~(11)cm~(-3)和10~(10)eV~(-1)cm~(-2)。然而,由脉冲的金属-氧化物-半导体(MOS)电容技术测得的产生寿命为0.1μs数量级。该寿命不能由所观察到的极低缺陷密度所确定的本体或表面产生来计算。缺陷源可能是次晶粒边界。由耗尽形MOS晶体管测得的电子迁移率(μ=700cm~2/Vs)与由本体材料所测得的相差不大。次晶粒边界对载流子的传输似乎没有明显的影响。
The electrical characteristics of annealed recrystallized silicon films on oxide-covered silicon substrates were investigated using capacitive techniques and transmission measurements. The analysis of deep level transient spectrum showed that the defect densities of the bulk and the interface were lower than 5 × 10 ~ (11) cm ~ (-3) and 10 ~ (10) eV ~ (-1) cm ~ (-2) . However, lifetime production as measured by pulsed Metal-Oxide-Semiconductor (MOS) capacitor technology is on the order of 0.1 μs. This lifetime can not be calculated from the body or surface area as determined by the observed very low defect density. The source of defects may be subgrain boundaries. The electron mobility (μ = 700 cm -2 / Vs) measured by the depletion-mode MOS transistor is not significantly different from that of the bulk material. Sub-die boundaries do not seem to have any significant effect on carrier transport.