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采用高能氧离子注入同成分铌酸锂(LN)晶体中制备离子注入光波导,对制备的光波导进行(200°C–500°C)不同温度的退火处理。采用常规光谱法对退火后的光波导进行光吸收谱研究。研究发现,氧离子注入后会使LN晶体中的锂离子发生缺失,进一步偏离化学剂量比;随氧离子注入剂量的增加,锂离子缺失的现象会加重。研究还发现离子注入后样品的吸收强度增加,注入剂量增大,其光吸收强度也提高,说明经离子注入后产生的色心点缺陷数目随注入剂量而增加。研究表明,主要的吸收色心缺陷有氧空位、激化子、间隙原子缺陷及反位Nb离子捕获电子等缺陷,由于这些色心缺陷的共同作用,导致了氧离子注入LN晶体的光吸收强度的加强。在实验的退火温度范围内,这些色心缺陷消除程度不显著,在LN晶体采用氧离子注入形成的光波导具有优良的温度稳定性。
The ion implantation optical waveguide is prepared by using high-energy oxygen ion implantation into the same composition lithium niobate (LN) crystal and the prepared optical waveguide is annealed at different temperatures (200 ° C.-500 ° C.). The light absorption spectrum of the annealed optical waveguide was studied by the conventional spectroscopy. The results show that the oxygen ion implantation will make the LN crystal in the absence of lithium ions further deviated from the chemical dose ratio; With the oxygen ion dose increased, the phenomenon of lithium ion loss will increase. The study also found that after ion implantation, the absorption intensity of the sample increased, the injection dose increased, and its light absorption intensity also increased, indicating that the number of color point defects generated after ion implantation increased with the injected dose. The results show that the main absorption defects of color centers are defects of oxygen vacancies, excitons, interstitial atoms and anti-trap Nb ions. Due to the combination of these color centers, the light absorption intensity of oxygen ions implanted into LN crystals strengthen. Within the experimental annealing temperature range, these color center defects are not eliminated to a great extent. The optical waveguide formed by oxygen ion implantation in the LN crystal has excellent temperature stability.