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用陷阱俘获模型和恒流方法研究了新生界面陷阱对薄氧化层MOS电容器的F-M(Fow-ler-Nordheim)电压(V_(FN))的影响,得到了电压漂移量△V_(FN)随时间变化的解析表述式.分析结果表明:(d△V_(FN))/(dt)vs △V_(FN)曲线可以用几段直线描述.采用线性化技术,可以方便地识别多陷阱现象.并分别提取原生陷阱及新生陷阱参数.实验结果表明:在恒流隧道电子注入的初始阶段,F-N电压漂移量主要由新生界面陷阱的电子俘获过程所决定,紧接着是原生氧化层体陷阱的电子俘获,然后是新生氧化层体陷阱的电子俘获.
The effects of the interfacial traps on the Fow-ler-Nordheim voltage (V_ (FN)) of the thin oxide semiconductor MOS capacitor were investigated by trap-capture model and constant current method. The voltage drift ΔV_ (FN) (FN) / (VN) / VF (FN) curve can be described by several straight lines.Using the linearization technique, we can easily identify the phenomenon of multi-trap The experimental results show that in the initial stage of constant current tunneling, the voltage drift of FN is mainly determined by the electron trapping process of the new interface traps, followed by the electron trapping of the native oxide traps Followed by electron capture of nascent oxide traps.