日本富士电机公司开发了利用Al和Ga离子注入法形成电力半导体器件所需的深掺杂p型杂质技术。为获得电力半导体器件的高耐压和大电流,要求pn结的整个大面积中都必须非常均匀。特别是为获得高耐压,一般采用扩散系数大的Al和Ga,在气相和真空中向p型衬底进行深扩散。但若衬底面积超过4英寸时,很难保证p层扩散浓度的均匀性,器件特性容易变坏。因此,能在大面积中均匀掺杂 Fuji Electric Japan Corp. has developed a deep-doped p-type impurity technology required for forming power semiconductor devices using Al and Ga ion implantation methods. In order to obtain high withstand voltage and high current of power semiconductor devices, it is required that the entire large area of ​​the pn junction must be very uniform. In particular, Al and Ga having a large diffusion coefficient are generally used to obtain high breakdown voltage, and deep diffusion is performed on the p-type substrate in the vapor phase and in the vacuum. However, if the substrate area exceeds 4 inches, it is difficult to ensure the uniformity of the p-layer diffusion concentration and the device characteristics are easily deteriorated. Therefore, it can be uniformly doped in a large area