本文基于我们建立的超导场效应器件的统一小信号理论，引进了动态导纳参数．对高温超导场效应晶体管的低频电流电压特性进行了数值模拟．分别对推广的二流体模型中正常电流和超导电流在一定的条件下随栅电压、漏电压、温度和频率的变化进行了分析．给出了一种高温超导场效应器件低频特性新的研究方法． In this paper, we introduce the dynamic admittance parameters based on the unified small-signal theory of the superconducting field effect device. The low-frequency current-voltage characteristics of HTS field-effect transistor are numerically simulated. The normal current and superconducting current in the extended two-fluid model are analyzed with the variation of gate voltage, drain voltage, temperature and frequency under certain conditions. A new research method of low frequency characteristic of high temperature superconducting field effect device is given.