论文部分内容阅读
在２００～３００Ｋ范围内测量了ｎ－ＨｇＣｄＴｅ的电学参数，并推导了载流子浓度、迁移率、电阻和组分的关系表达式，所得结果与红外光谱测量数据符合．利用ＨｇＣｄＴｅ光导器件的电阻－温度特性确定组分，不需要电阻的精确值，是一种判断器件均匀性和性能的有效方法
The electrical parameters of n-HgCdTe were measured in the range of 200 ~ 300K, and the expressions of carrier concentration, mobility, resistance and composition were deduced. The obtained results were in good agreement with those of infrared spectroscopy. Determining components with the resistance-temperature characteristics of a HgCdTe photoconductive device does not require the exact value of the resistance and is an effective way to determine device uniformity and performance