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以Sn和Sn+SnF_2为靶材,采用射频(RF)反应磁控溅射法在150℃不同O_2流量下制备了厚度约为300 nm的SnO_2和SnO_2:F薄膜。通过X射线衍射、Hall效应测试系统和紫外–可见分光光度计研究了两种薄膜的结构和透明导电性能。结果表明:随O_2流量增加,SnO_2薄膜由非晶变为多晶,择优取向从(101)面过渡到(211)面,薄膜电阻先减小后增大,平均透光率逐渐上升。随O_2流量增加,SnO_2:F薄膜结构与透明导电性能的变化规律与SnO_2薄膜类似,SnO_2:F薄膜的择优取向依次为(002)、(101)和(211)面,由于F掺杂,SnO_2:F薄膜的载流子浓度和迁移率明显增加,电阻率降低,同时平均透过率有所提高。目前,在合适的O_2流量下,SnO_2:F薄膜可达到的最低电阻率为4.16×10~(–3) ?·cm,同时其平均透光率为86.5%。
SnO_2 and SnO_2: F films with thickness of about 300 nm were prepared by RF magnetron sputtering at different O 2 fluxes with Sn and Sn + SnF 2 as targets. The structures and the transparent conductive properties of the two films were investigated by X-ray diffraction, Hall effect test system and UV-visible spectrophotometer. The results show that the SnO_2 film changes from amorphous to polycrystalline with the increase of O_2 flow rate, and the preferred orientation changes from (101) to (211). The sheet resistance first decreases then increases and the average transmittance gradually increases. The structure of SnO_2: F thin films is similar to that of SnO_2 thin films. The preferred orientation of SnO_2: F thin films is (002), (101) and (211) : F film carrier concentration and mobility increased significantly, the resistivity decreased, while the average transmittance increased. At present, the lowest specific resistivity of SnO_2: F thin films is 4.16 × 10 -3 cm -3 at the proper O 2 flux, and the average transmittance is 86.5% at the same time.