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以小注入条件下的注入少子分布为初始值，本文依据送代法首次得到了适用于任意注入条件，基区从指数掺杂分布到均匀掺杂分布的集电极电流密度和基区渡越时间的解析表达式．三次选代的解析结果与数值迭代结果比较表明：在注入发射结电压ＶＢＥ≤１．０Ｖ的情况下，三次迭代形成的集电极电流密度和基区渡越时间的解析表达式有效．
The injection minority carrier distribution under the condition of small injection is taken as the initial value. According to the generation-generation method, it is the first time that any injection condition is suitable. The collector current density and the base transit time from the exponential doping to the uniform doping distribution, Analytic expression. The results of three generations of substitution and numerical iteration results show that the analytical expression of collector current density and base transit time formed by three iterations is valid under the condition of VBE≤1.0V.