在沟道衬底上用两步 LPE(液相外延)生长可以制造1.3μm 和1.55μm 的低阈值电流注入激光器。在1.3μmBC(掩埋新月型)激光器中控制掺杂浓度可以降低 InGaAsP激光器的分路漏电流,并给出低阈值电流,良好的光——电流线性、高工作温度和长寿命。本文报告了1.55μmInGaAsPBC 激光器性能的显著进展。1.55μm BC 激光器是早期1.3μm BC 激光器结构的改进型,它的性 Low threshold current injection lasers of 1.3 .mu.m and 1.55 .mu.m can be made by two-step LPE (Liquid Phase Epitaxy) growth on a channel substrate. Controlling the doping concentration in 1.3μm BC (Buried Crescent) lasers can reduce the shunt leakage current of InGaAsP lasers and give low threshold current, good light-current linearity, high operating temperature and long lifetime. This article reports significant advances in the performance of 1.55μm InGaAsPBC lasers. The 1.55μm BC lasers are an improvement on the early 1.3μm BC lasers and their properties