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与试验设计方法相结合,提出了一个用于集成电路工艺实时统计分析的方法.对CMOS和NMOS电路的实际模拟分析结果表明,利用该方法对工艺线上的芯片测量结果进行分析,能找出导致器件及电路特性分布异常的主要可能工序.
Combined with the experimental design method, a method for real-time statistical analysis of integrated circuit technology is proposed.The simulation results of CMOS and NMOS circuits show that using this method to analyze the chip measurement results of the process line can find out Lead to the device and circuit characteristics of the main possible abnormal distribution process.