希腊克里特研究中心和克里特大学的科学家报导了用激光退火法使非晶GaAs在硅片上再结晶。该小组首先用分子束外延沉积GaAs和封装层(即AIAs和双层GaO/AIAs)。这对于减少退火过程中As的损耗是必要的。GaAs再结晶是用248nmKrF准分子激光诱导的。为了获得最佳结果,准分子激 Scientists at the Crete Research Center in Greece and the University of Crete have reported the recrystallization of amorphous GaAs on silicon using laser annealing. The team first used molecular beam epitaxy to deposit GaAs and encapsulation layers (ie, AIAs and double-layer GaO / AIAs). This is necessary to reduce As loss during annealing. The recrystallization of GaAs is induced by a 248 nm KrF excimer laser. For best results, excimer shocks