The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency(RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature(I–V –T) measurements, the barrier height of thermionic-field emission(TFE) from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole(FP) emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power. The influences of dry-etching damage on the electrical properties of an AlGaN / GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. , the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency (RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current-voltage-temperature ( I-V-T) measurements, the barrier height of thermionic-field emission (TFE) from GaN is reduced as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel-Poole that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.