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本文介绍了利用扫描电子显微镜对GaAsMESFET背面通孔形貌及电镀状况进行了分析.并对电镀工艺进行了改进.给出了大量改善前后的电镜照片图形.
This article describes the use of scanning electron microscopy GaAsMESFET back through hole morphology and plating conditions were analyzed and the electroplating process has been improved.May give a lot of improvement before and after the electron micrograph.