论文部分内容阅读
采用电沉积法获得了接近化学计量比的贫铜和富铜的Cu(In1-xGax)Se2(CIGS)预置层,研究比较了两种预置层及其硒化处理后的成分和结构特性.得到了明确的实验证据证明,硒化后富铜薄膜中的CuxSe相会聚集凝结成结晶颗粒分散在表面.研究表明:在固态源硒化处理后,薄膜成分基本不变;当预置层中原子比Cu/(In+Ga)<1.1时,硒化后薄膜表面存在大量的裂纹;而当Cu/(In+Ga)>1.2时,可以消除裂纹的产生,形成等轴状小晶粒;富铜预置层硒化时蒸发沉积少量In,Ga和Se后,电池效率已达到6.8%;而贫铜预置层硒化后直接制备的电池效率大于2%,值得进一步深入研究.
The near-stoichiometric copper (Cu) and copper-rich Cu (In1-xGax) Se2 (CIGS) preplated layers were obtained by electrodeposition. The effects of two preplated layers and their selenization composition and structural properties The experimental evidence shows that the selenization of copper-rich CuxSe phase will gather to condense into crystalline particles dispersed in the surface.The results show that: in the solid state source selenization, the film composition is basically unchanged; when the preset layer In Cu / (In + Ga) <1.1, there are a lot of cracks on the surface of the film after selenization. When Cu / (In + Ga)> 1.2, the cracks can be eliminated and the formation of equiaxed small grains . The cell efficiency of the pre-copper-rich layer deposited by evaporating a small amount of In, Ga and Se during selenization was 6.8%. The efficiency of the cell prepared directly by the pre-depleted copper layer was greater than 2%, which deserved further study.