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基于3维TCAD器件模拟,研究了90nmCMOS双阱工艺下p+深阱掺杂对电荷共享的影响.研究结果表明:改变p+深阱的掺杂浓度对PMOS管之间的电荷共享的影响要远大于NMOS管;通过增加p+深阱的掺杂浓度可以有效抑制PMOS管之间的电荷共享.这一结论可用于指导电荷共享的加固.
Based on the 3-D TCAD device simulation, the effect of p + deep well doping on charge sharing in a 90nm CMOS dual-well process was studied. The results show that changing the doping concentration of the p + deep well has much more influence on the charge sharing between PMOS transistors NMOS transistor can effectively suppress charge sharing between PMOS transistors by increasing the doping concentration of p + deep well, which can be used to guide the reinforcement of charge sharing.