In recent years,all-inorganic perovskite materials have set off a research boom owing to features,such as good thermal stability,suitable bandgap,and fascinating optical properties.However,the power conversion efficiency (PCE) and the ambient stability of all-inorganic perovskite solar cells still remain a challenge.Herein,we investigate the effect of the addition of InI3 into CsPbI3 film on the corresponding device.InI3 incorporation could retard the crystallization process and control the growth rate of CsPbI3 polycrystalline films,yielding a high quality film with large grains and few voids.The increment in electrostatic potential and the reduction of carrier recombination enabled the open-circuit voltage of fabricated perovskite solar cell to be increased from 0.89 to 0.99 V.The champion device delivered a power conversion efficiency of 17.09％,which is higher than 14.36％ for the reference device.And the InI3-included solar cell without any encapsulation retained 77％ of its original efficiency after 860 h aging at room temperature in N2 condition.