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聚焦离子束(Focused Ion Beam)技术作为制作光集成电路及三维器件等最新的高性能半导体器件的手段之一,令人注目。特别是利用它进行离子注入是很有前途的。常规的离子注入法是先形成杂质气体的等离子区,从中引出离子,经加速后注入硅或砷化镓基片内,由于这种方式的离子束直径大,所以需用掩模来限制离子注入的区域。随着半导体器件的高集成化,电路图形越来越缩小,1M位以上的存储器其图形尺寸要求在1μm以下,用掩模的方法制出亚微米图形是比较困难的,而聚焦离子束技术可实现无掩模注入,从而成为一项重要的新工艺。
Focused Ion Beam technology is attracting attention as one of the means to create the latest high-performance semiconductor devices such as optical integrated circuits and three-dimensional devices. Especially the use of it for ion implantation is very promising. Conventional ion implantation is to first form a plasma region of impurity gases, from which ions are extracted and accelerated to be implanted into a silicon or gallium arsenide substrate. Due to the large ion beam diameter in this manner, a mask is used to limit ion implantation Area. With the high integration of semiconductor devices, the circuit diagram is getting smaller and smaller, 1M memory above the graphics size requirements of 1μm or less, the mask method to make sub-micron graphics is more difficult, and focused ion beam technology can Achieve maskless injection, which has become an important new technology.