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通过比较在低温下避光,光照、衬底加偏置三种情况下进行的电导率和霍尔效应测量、分析了氧注入绝缘体上硅材料(SIMOX)。发现在 1300℃以上进行高温退火处理的SIMOX膜,其质量比在1150～1200℃下常规退火的SIMOX膜有 很大的提高。通过研究载流子的迁移率和寿命特性,杂质离子化作用,掺杂补偿,膜沾 污和散射机理等,对SIMOX膜进行了分析。发现在低于60K时,跃迁传导占优势。
Oxygen implanted silicon on insulator (SIMOX) was analyzed by comparing conductivity and Hall effect measurements under three conditions: dark, light, and substrate bias at low temperatures. It was found that SIMOX films annealed at high temperatures above 1300 ° C showed a significant increase in the mass fraction of SIMOX films annealed at 1150-1200 ° C. SIMOX films were analyzed by studying carrier mobility and lifetime characteristics, impurity ionization, doping compensation, film contamination and scattering mechanisms. Found below 60K, the transition conduction dominant.