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单晶碳化硅作为高温半导体材料,日益得到人们的重视,它所制作的器件在500℃环境温度下仍可正常工作。此外,单晶碳化硅尚可以制成整流管、电发光二极管、数码管及热敏电阻等。单晶碳化硅的生长方法有许多种,常用的是升华法,在真空度为10~(-5)mm 汞高的炭管炉内,以纯氩保护气氛下,急剧升温至2400℃以上,靠装填于炭管内的碳化硅原料升华而在炭管内壁生长单晶碳化硅。此方法生长的单晶碳化硅片其线度尺寸均在5mm 以下,而且仅处
As a high-temperature semiconductor material, single-crystal silicon carbide is getting more and more attention. The device made by it is still working normally at the temperature of 500 ℃. In addition, monocrystalline silicon carbide can still be made rectifier, LED, digital tube and thermistor. There are many kinds of growth methods of single crystal silicon carbide, commonly used is the sublimation method, in a vacuum degree of 10 ~ (-5) mmHg high carbon tube furnace, with pure argon protection atmosphere, the rapid warming to above 2400 ℃, by The silicon carbide material filled in the carbon tube sublimates and grows monocrystalline silicon carbide on the inner wall of the carbon tube. This method of growth of monocrystalline silicon carbide chips are less than 5mm in line size, and only at