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采用热丝辅助射频等离子体化学气相沉积（ＣＶＤ）方法在较大面积（≥５ｃｍ２）镍衬底上生长立方氮化硼（ｃ－ＢＮ）薄膜．所用气体为硼烷、氨气和氢气的混合气体．实验发现，灯丝温度及其分布是影响ｃ－ＢＮ薄膜生长的主要因素．Ｘ射线衍射（ＸＲＤ）分析表明，样品中立方相的成分随温度的升高而增加，当温度达到２０００℃时，样品中主要为立方相成分，无六方相（ｈ－ＢＮ）或其它杂相形成．用扫描电镜（ＳＥＭ）对样品表面不同位置形貌观察发现，立方相晶粒大小均匀且分布致密．Ｘ光电子能谱（ＸＰＳ）测得样品中Ｂ原子与Ｎ原子的组分比大约为１１．当温度达到２０００℃以上时，样品中立方相成分减小，说明在合适的温度下，可制备具有理想化学配比的大面积ｃ－ＢＮ薄膜．
Cubic Boron Nitride (c-BN) thin films were grown on a large area (≥5cm2) nickel substrate by hot filament assisted radio frequency plasma chemical vapor deposition (CVD). The gas used is a mixture of borane, ammonia and hydrogen. The experiment found that the filament temperature and its distribution are the main factors affecting the growth of c-BN films. X-ray diffraction (XRD) analysis showed that the composition of the cubic phase in the sample increased with increasing temperature. When the temperature reached 2000 ℃, the sample mainly consisted of cubic phase without hexagonal phase (h-BN) or other miscellaneous phase form. Scanning electron microscopy (SEM) on the sample surface morphology observed at different locations found that the cubic phase grain size uniform and densely distributed. X-ray photoelectron spectroscopy (XPS) measured in the sample B atoms and N atoms component ratio of about 11. When the temperature reaches above 2000 ℃, the composition of cubic phase in the sample decreases, indicating that at a suitable temperature, a large area c-BN thin film with ideal stoichiometry can be prepared.