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应用 direct- currentcurrent voltage(DCIV)和电荷泵 (change pum ping)技术研究了 L DD n MOST’s在热电子应力下产生的界面陷阱 .测试和分析的结果显示 ,一股额外的漏端电流影响了 DCIV谱峰中表征漏区的 D峰 .这股电流主要是陷阱辅助隧穿电流 .
The interface traps of L DD n MOST’s under hot electron stress were investigated using direct current current (DCIV) and charge pum ping techniques. The results of the tests and analyzes show that an additional drain current affects the DCIV Peak D in the peak of the characterization of the drain region. This current is trap-assisted tunneling current.