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在衬底上溅射沉积一层金属钒膜,然后对其退火制备氧化钒薄膜。研究了原位退火热处理和后续退火热处理对氧化钒薄膜成分及其热敏性能的影响。XPS分析表明,原位380℃退火处理得到的氧化钒薄膜中4价态和5价态钒的比例为1.097:1,经后续退火处理后,该比例变为0.53:1;同时,原位退火处理得到的氧化钒薄膜的V/O比为1:2.24,经后续退火处理变为1:2.33。AFM分析后显示,经后续退火处理的薄膜晶粒尺寸有所增大。测试了薄膜方阻随温度的变化,结果显示,生成的薄膜具有明显的金属-半导体相变;原位退火热处理后的薄膜方阻(R)为5.46kΩ/□(25℃),方阻温度系数(TRC)为-1.5%/℃(25℃);后续退火热处理后,薄膜方阻增大到231kΩ/□(25℃),方阻温度系数升高为-2.74%/℃(25℃)。此外,就氧化钒薄膜的成分、热敏性能与退火处理之间的关系进行了讨论。
A layer of vanadium metal film is sputter deposited on the substrate, and then annealed to prepare a vanadium oxide film. The effects of in situ annealing and subsequent annealing on the composition and thermal properties of vanadium oxide films were investigated. XPS analysis showed that the proportion of tetravalent valence vanadium in the vanadium oxide film annealed at 380 ℃ was 1.097: 1, and the ratio was 0.53: 1 after annealing. In situ annealing The V / O ratio of the resulting vanadium oxide film was 1: 2.24, followed by annealing to 1: 2.33. After AFM analysis, the grain size of the film annealed by subsequent annealing increased. The square resistance of the film was tested with temperature. The results showed that the film had obvious metal-semiconductor phase transition. The square resistance (R) of the film after in-situ annealing was 5.46kΩ / □ (25 ℃) The coefficient of resistance (TRC) was -1.5% / ℃ (25 ℃). After annealing, the square resistance of the film increased to 231kΩ / □ (25 ℃) and the square resistance temperature coefficient increased to -2.74% / ℃ . In addition, the relationship between the composition of the vanadium oxide film, the thermal sensitivity and the annealing treatment is discussed.