为提升器件电流等级,大功率IGBT往往由多个芯片与子单元并联组成。当芯片与子单元并联时,有效控制器件内部的均流效果非常重要。文章分析了寄生电感对器件均流的影响,并通过理论推导分析了芯片参数对静态均流的影响,最后通过仿真和实验验证了芯片参数对动态均流的影响。结果表明,主回路寄生参数的不对称对均流的影响大于芯片参数差异的,而两者对开通均流的影响又都大于对关断均流的影响。 In order to enhance the current level of the device, high-power IGBT often consists of multiple chips and sub-units in parallel. When the chip is connected in parallel with the subunits, it is important to effectively control the current sharing within the device. The article analyzes the influence of parasitic inductance on the current sharing of the device, and analyzes the influence of the chip parameters on the static current sharing theoretically. Finally, the influence of chip parameters on the dynamic current sharing is verified by simulation and experiment. The results show that the asymmetry of the main loop parasitics has more influence on the average current than the chip parameter, and the influence of the two on the average current is larger than the average current.