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在SiO_2/Si 结构上用CVD生长6000A|°厚的多晶硅膜.通过注入不同剂量的磷离子和相应的热退火得到了不同阻值的多晶硅电阻.给出了方块电阻值R_□和注入剂量N_D之间的关系的实验结果. 实验证明,处于R_□-N_D曲线陡变区的多晶硅电阻对H_2气氛下的热处理很灵敏.后者可使R_□下降几个数量级.但接着进行的 N_2热处理可使之恢复. 以上的结果均可用多晶硅薄膜电导的势垒理论得到解释.
Polycrystalline silicon films with a thickness of 6000 A | ° thick were grown by CVD on a SiO 2 / Si structure. Polycrystalline silicon resistors of different resistance were obtained by implanting different doses of phosphorus ions and corresponding thermal annealing. The square resistance R_ □ and the implantation dose N_D The experimental results show that the resistance of polycrystalline silicon in the steep region of R_N-ND curve is sensitive to the heat treatment in H_2 atmosphere, and the latter can decrease the R_D by several orders of magnitude, but the subsequent N_2 heat treatment can make Of the recovery.The above results can be polysilicon thin film conductivity barrier theory is explained.