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The DC and RF performance of 30 nm gate length enhancement mode(E-mode) InAlN/AlN/GaN high electron mobility transistor(HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool.The proposed device has the features of a recessed T-gate structure,InGaN back barrier and Al_2O_3 passivated device surface.The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm,transconductance g_m of 1050 mS/mm,current gain cut-off frequency f_t of 350 GHz and power gain cut-off frequency f_(max) of 340 GHz.At room temperature the measured carrier mobility(μ),sheet charge carrier density(n_s) and breakdown voltage are 1580 cm~2/(V·s),1.9 × 10~(13) cm~(-2),and 10.7 V respectively.The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN / AlN / GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. device has the features of a recessed T-gate structure, InGaN back barrier and Al 2 O 3 passivated device surface. proposed HEMT exhibits a maximum drain current density of 2.1 A / mm, transconductance g_m of 1050 mS / mm, current gain cut-off frequency f_t of 350 GHz and power gain cut-off frequency f_ (max) of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density (n_s) and breakdown voltage are 1580 cm -2 / (V · s ), 1.9 × 10 ~ (13) cm ~ (-2), and 10.7 V respectively.The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave wave high power RF VLSI circuit applications.