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本文应用能带结构的多谷模型,对N型硅在[100]方向的压阻效应进行了理论分析。当沿N型硅晶体的[100]轴施加压力并分别在[100]和[010]方向加电场时所引起的电导率变化的主要原因是:电子在能谷之间转移时,电子的迁移率发生变化。由此推导出N型硅的纵向压阻系数π_(11)与横向阻压系π_(12)之间的关系是: π_(12)=-1/2π_(11)且π_(12)的符号是“正”,π_(11)的符号是“负”。这一结果与C.S.Smith的实验测量数据吻合。
In this paper, the multi-valley model of band structure is used to analyze the piezoresistive effect of N-type silicon in [100] direction. The main reason for the change in conductivity that results when a pressure is applied along the [100] axis of an N-type silicon crystal and the electric field is applied in the [100] and [010] directions respectively is that the electrons migrate Rate changes. It is deduced that the relationship between the longitudinal piezoresistivity π_ (11) of N-type silicon and the transverse resistivity system π_ (12) is: π_ (12) = -1 / 2π_ (11) and π_ Is “positive” and the sign of π_ (11) is “negative”. This result is in good agreement with the experimental data from C.S. Smith.