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在简要地回顾表示构成I~2L基本单元的反向运用多收集极n-p-n晶体管和横向p-n-p晶体管特征的有关器件参数之后,定量地讨论了这种门的电路特性。导出了与单元几何尺寸、扇出、杂质分布及复合特性有关的转移特性、噪声容限和每个门的传播延迟时间的解析表达式。将这些表达式和实验的以及数学计算的电路模拟结果进行了比较。
Circuit characteristics of such gates are discussed quantitatively after a brief review of related device parameters representing the reverse utilization of multi-collector n-p-n transistors and lateral p-n-p transistors making up the I-2L basic cell. The analytical expressions for the transfer characteristics, noise margin, and propagation delay time per gate are derived for cell geometry, fanout, impurity distribution, and composite properties. These expressions are compared with experimental and mathematically calculated circuit simulations.