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随着分辨率的提高,传统金属电极在电阻率和抗氧化性能方面已经不适合作为需要高温热处理的场致发射显示器件中的薄膜电极。本文采用5.77%(原子比)Sn掺杂的ZnO:Sn作为Ag层的保护层,利用磁控溅射法制备ZnO:Sn/Ag/ZnO:Sn复合薄膜及其电极,并采用X射线衍射、光学显微镜、扫描电子显微镜和电性能测试系统研究复合薄膜及其电极在经过不同温度退火后的晶体结构、表面形貌和电学性能的变化。ZnO:Sn膜层致密,25 nm厚的ZnO:Sn足以保护Ag层在530℃的高温中不被明显氧化,电极电阻率低达2.0×10-8Ω.m左右。
With the increase of the resolution, the conventional metal electrodes have not been suitable as the thin-film electrodes in field emission display devices that require high-temperature heat treatment in terms of resistivity and oxidation resistance. In this paper, ZnO: Sn doped with 5.77% (atomic ratio) Sn was used as the protective layer of Ag layer. ZnO: Sn / Ag / ZnO: Sn composite thin films and their electrodes were prepared by magnetron sputtering. Optical microscopy, scanning electron microscopy and electrical properties testing system were used to study the crystal structure, surface morphology and electrical properties of the composite films and their electrodes annealed at different temperatures. The ZnO: Sn film is dense, ZnO: Sn with a thickness of 25 nm is enough to protect the Ag layer from being oxidized obviously at high temperature of 530 ℃, and the electrode resistivity is as low as 2.0 × 10-8Ω.m.