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显微观测LSI硼注入硅形成的PN结,发现横向结深大于纵向结深,用紫外荧光法检测了B~+注入样品的Fe杂质沾污,研究了Fe~+·B~-离子“对”在SiO_2边缘的横向增强扩散效应.
The results show that the transverse junction depth is larger than the vertical junction depth by micro-implanting boron into the PN junction formed by silicon. The contamination of Fe impurity in B ~ + implanted samples is detected by UV fluorescence method. The effect of Fe ~ + · B ~ Lateral Enhancement Diffusion Effect at the Edge of.