用电子束蒸发制得了透明导电的ITO(indiumtin oxide)薄膜(厚3000—5000(?)),其方块电阻为4.5—20Ω/□,波长7000(?)时的透光率为80—95％。用x-线衍射分析方法测定了膜的组成与结构,用扫描电镜(SEM)观察了薄膜的形貌。薄膜的颗粒度为1—3μm,载流子浓度(N)为3.9×10~(19)cm~(-3),霍耳迁移率(μ_H)为94cm~2·V~(-1)·s~(-1),电阻率(ρ)为4.0×0~(-4)—2×10~(-3)Ω·cm,E_g为3.4eV。测得的Hall电压是负值,说明它是一种n型半导体。 Transparent conductive indium tin oxide (3000-5000 (?)) Thin film was obtained by electron beam evaporation with a sheet resistance of 4.5-20? / ?, a light transmittance of 80-95% at a wavelength of 7000 (?), . The composition and structure of the film were measured by x-ray diffraction analysis. The morphology of the film was observed by scanning electron microscopy (SEM). The film has a particle size of 1-3μm, a carrier concentration of 3.9 × 10 ~ (19) cm -3, a Hall mobility of 94cm ~ 2 · V -1 s -1, the resistivity ρ was 4.0 × 0 -4 -2 × 10 -3 Ω · cm, and the E_g was 3.4eV. The measured Hall voltage is negative indicating that it is an n-type semiconductor.