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用体积负载型装置研究了在OF~4+4%0_2等离子体中Si和多晶硅的刻速均匀性,理论研究和实验结果表明,硅和多晶硅在OF_4+4%0_2等离子体中的刻蚀过程是个受扩散限制的过程,用金属环来控制垂直于基片表面方向的游离基的扩散,可以使整个基片上的刻速很均匀.
The volume uniformity of Si and polycrystalline silicon in OF ~ 4 + 4% 0_2 plasma was studied by volumetric loading device. The theoretical research and experimental results show that the etching process of Si and polycrystalline silicon in OF_4 + 4% 0_2 plasma Is a diffusion-limited process that uses metal rings to control the diffusion of radicals perpendicular to the surface of the substrate to provide a uniform etch rate across the substrate.