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Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,pdoped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications.
Metal-Oxide-Semiconductor Capacitance-Voltage (MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, pdoped and compensated silicon containing the double-donor sulfur and iron, the double-acceptor zinc, and the amphoteric or one-donor and one-acceptor gold and silver impurities. The provision provides giant trapping capacitances at trapping energies from 200 to 800 meV (50 to 200 THz and 6 to 1.5 μm ), which suggest potential sub-millimeter, far-infrared and spin electronics applications.