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Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 (C0.4S0.6BNT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process (time and temperature) on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of (200) peak increased first then decreased with annealing temperature and became predominant at 800 °C. In contrast, no evident change could be observed in the (00l) peak. The remnant polarization (Pr) and coercive field (Ec) for C0.4S0.6BNT film annealed at 800 °C for 5 min were 21.6 μC/cm2 and 68.3 kV/cm, respectively.
Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 (C0.4S0.6BNT) ferroelectric thin films were prepared on Pt / Ti / SiO2 / Si substrates by sol-gel method. Effect of annealing process (time and temperature) on structures and ferroelectric properties The relative intensity of (200) peak increased first then decreased with annealing temperature and became predominant at 800 ° C. In contrast, no bright change was observed in the (001) peak. The remnant polarization (Pr) and coercive field (Ec) for C0.4S0.6BNT film annealed at 800 ° C for 5 min were 21.6 μC / cm2 and 68.3 kV / cm, respectively.