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采用磁控溅射法先在Si(100)基片上沉积适当厚度的Fe薄膜作为底层,通过对Fe底层厚度及氧气流量的控制,使底层Fe形成化学计量的无缓冲层的Fe3O4多晶薄膜。通过X射线衍射和磁强计分析了样品的结构和磁性能。结果表明:当初始氧气流量为1.5mL/s时,在15nm的Fe薄膜底层上可成功制备高晶粒织构的化学计量的Fe3O4薄膜。将Fe3O4薄膜应用到巨磁电阻(giant magnetoresistance,GMR)多层膜中,由于多层膜材料间电阻率的失配,利用Fe3O4半金属薄膜并不能获得预见的大GMR效应。
The magnetron sputtering method was used to deposit the Fe thin film with appropriate thickness on the Si (100) substrate as the underlayer. By controlling the thickness of the Fe substrate and the oxygen flow rate, the underlying Fe was formed into a stoichiometric uncoated Fe3O4 polycrystalline thin film. The structure and magnetic properties of the samples were analyzed by X-ray diffraction and magnetometer. The results show that the stoichiometric Fe3O4 thin films with high grain structure can be successfully prepared on the 15nm Fe thin film when the initial oxygen flow rate is 1.5mL / s. The Fe3O4 thin film is applied to giant magnetoresistance (GMR) multilayers. Due to the mismatch between the resistivities of multilayer materials, the expected large GMR effect can not be obtained by using Fe3O4 semimetallic thin films.