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在280～470K温度范围内,测试了由硅烷(SiH_4)在820～840℃温度下进行化学气相淀积的块状多晶硅的零偏压电阻,此电阻率是温度的函数。实验发现,掺磷浓度在≤1.0×10~(13)～5.0×10~(18)cm(-3)范围内的样品,当测试温度T大于特征温度T_c时,其logρ～1/T关系均具有明显呈现Arrhenius特性的区域,能够获得确定的激活能值。实验结果与Sager等人提出的激活能与掺杂浓度关系的理论表达式符合得很好。
In the temperature range of 280 ~ 470K, the zero bias resistance of bulk polycrystalline silicon (SiH_4) chemically vapor deposited at 820 ~ 840 ℃ was tested. The resistivity is a function of temperature. The experimental results show that the log ~ ~ 1 / T relationship of the samples doped with phosphorus in the range of 1 1.0 × 10 ~ (13) ~ 5.0 × 10 ~ (18) cm (-3) at the test temperature T greater than the characteristic temperature T_c All have regions that clearly exhibit Arrhenius properties, enabling a certain activation energy value to be obtained. The experimental results agree well with the theoretical expressions proposed by Sager et al. For the relationship between activation energy and doping concentration.