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本文介绍了一种采用冷阴极大面积电子束对硼离子注入硅片快速退火的实验方法。测试分析结果表明:本法与常规退火方法相比,除了有相同的电激活和晶格恢复之外,还具有快速、低温和杂质再分布影响小等特点。
This paper presents an experimental method using a cold cathode large area electron beam to rapidly anneal a boron ion implanted silicon wafer. The test results show that this method has the characteristics of fast, low temperature and little influence of impurity redistribution compared with the conventional annealing method except for the same electrical activation and lattice recovery.