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基于TSMC 0.18μm CMOS工艺,设计了一款工作在3 GHz~5 GHz频段的增益可调超宽带低噪声放大器(LNA)。LNA输入级采用局部反馈的共栅结构,实现了超宽带输入匹配和良好的噪声性能;放大电路级采用提出的新型电流舵结构,实现了放大器增益连续可调;输出级采用源极跟随器,获得了良好的输出匹配。利用ADS2009进行仿真验证,结果表明,在3 GHz~5 GHz工作频段内,LNA获得了25 dB的增益可调范围,最高增益达到24 dB,输入端口反射系数小于-11 dB,输出端口反射系数小于-14 dB,最小噪声系数为2.3 dB,三阶交调点(IIP3)为4 dBm,在1.2 V电压下,电路功耗仅为8.8 mW。
Based on TSMC 0.18μm CMOS technology, a gain adjustable ultra-wideband low noise amplifier (LNA) is designed to operate in the 3 GHz to 5 GHz frequency band. LNA input stage using partial feedback common-gate structure, to achieve the ultra-wideband input matching and good noise performance; amplifier circuit level using the proposed new type of current structure of the rudder, the amplifier gain continuously adjustable; output stage source follower, Get a good output match. The ADS2009 simulation results show that the LNA achieves a gain adjustable range of 25 dB in the frequency range of 3 GHz to 5 GHz with the maximum gain of 24 dB, the input port reflection coefficient of less than -11 dB and the output port reflection coefficient of less than -14 dB with a minimum noise figure of 2.3 dB and a 4 dBm IIP3 at 8.8 mW at 1.2 V.