论文部分内容阅读
用低压－金属有机化学气相沉积（ＬＰＭＯＣＶＤ）方法生长了ＺｎＣｄＳｅＺｎＳｅ和ＺｎＴｅＳｅＺｎＳｅ多量子阱（ＭＱＷｓ）。在生长室压力３８ｔｏｒ（５×１０３Ｐａ），衬底面积１９×２０ｍｍ２的ＧａＡｓ衬底上，生长１００周期的ＺｎＣｄＳｅＺｎＳｅＭＱＷｓ，经扫描电镜测量，生长不均匀性仅小于１０％。随生长压强增大，生长不均匀性也增大。在相同条件下生长１０周期的ＺｎＣｄＳｅＺｎＳｅ和ＺｎＴｅＳｅＺｎＳｅＭＱＷＳ，在Ｘ射线衍射谱上分别可观测到０，１级和０，１，２级卫星峰，随生长周期增加，其特性越明显。在生长５０周期的ＺｎＴｅＳｅＺｎＳｅＭＱＷＳｓ中可观测到０，１，２，３级卫星峰。在７７Ｋ，脉冲Ｎ２激光器激发的ＺｎＴｅＳＥＺｎＳｅＭＱＷｓ中观测到了起因于激子的受激发射。
ZnCdSeZnSe and ZnTeSeZnSe MQWs were grown by LPMOCVD. ZnCdSeZnSeMQWs with 100 cycles were grown on a GaAs substrate with a pressure of 38 torr (5 × 103 Pa) and a substrate area of 19 × 20 mm 2 in the growth chamber. The growth heterogeneity was only less than 10% as measured by scanning electron microscopy. As the growth pressure increases, the growth heterogeneity also increases. Growth of 10-period ZnCdSe-ZnSe and ZnTeSe-ZnSeMQWS under the same conditions can observe 0, 1 and 0, 1 and 2 satellite peaks respectively on the X-ray diffraction spectrum. With the increase of the growth period, the more obvious the characteristic . In the growth of 50 cycles ZnTeSe ZnSeMQWSs can be observed 0,1,2,3 satellite peaks. At 77K, stimulated emission from excitons was observed in ZnTeSE-ZnSeMQWs excited by a pulsed N2 laser.