论文部分内容阅读
本文报道了一种由＜１１０＞条组成的，用于（１００）硅ＫＯＨ各向异性腐蚀的凸角补偿图形．该图形的设计特点是利用不对称的分枝和端点弯头对条上腐蚀前沿实现控制使补偿后凸角的削角大大减小．文中给出常用补偿图形的有效补偿长度和临界补偿时的削角比．该方法已应用于微机械硅加速度传感器的掩模设计．
This paper reports a lobe compensation pattern composed of <110> strips for (100) silicon KOH anisotropic etching. The design features of this graphic are the use of asymmetric branching and endpoint elbows to control the leading edge of the strip to greatly reduce the chamfered corners of the compensated lobe. The paper gives the effective compensation length of the commonly used compensation graph and the chamfer ratio of the critical compensation. This method has been applied to mask design of MEMS accelerometer.